Table 2 Leadership Changes Group Previous Leader New Leader Sapphire Single Crystal Ingot Task Force (new)

Transcription

1 China HB-LED Standards Committee Meeting Summary and Minutes China Fall Standards Meeting 2014 Friday, September 19, 2014, 09:30-14:40 #158,Zhongxing Avenue, Nangang District, Harbin Next Committee Meeting Friday, April 10th, 2015 Table 1 Meeting Attendees Co-Chairs: Yong Ji (GHTOT) SEMI Staff: Kris Shen SEMI China, Daniel Qi SEMI China, Adam He SEMI China, Richard Jiang SEMI China Company Last First Company Last First AMEC Lee Steven GHTOT Ren Jing AMEC Liu Yingbin Hermes-Epitek Sun Liang AepiTak Huang Hongjia HIT Gan Yang Anji Wang Shumin Hyperion Li Mingyuan Anji Wang Liangyong Istarwafer Lin Fan AURORA Zuo Hongbo Istarwafer Zheng Dong AURORA Yang Xinhong Kaifaqu Li Shi AURORA Zhang Xuejun Kaifaqu Jiang Yuanping AURORA Ding Guangbo KPDQ Li Guoping CBVAC Liu Xiaoguang Meyer Burger Lu Jia CBVAC Liu Chunyan Meyer Burger Lu Tingting CFLD Ji Hua Monocrystal Wang Zhan CFLD Chang Jianguang Monocrystal Niu Congshi Crystaland Wu Xinqiang NJC Zheng Songsen CSUN Luo Wenjun NJC Li Ye Dfx-ray Zhao Songbin NMC Wang Zheng Dfx-ray Ai Wei Scientific Visual SA Watts John Michael DRE Lai Keli Sdsafeier Wang Jingbo DRE Zhong Yuan Sdsafeier Zhao Jingting ECEC Liu Jianzhe Sdsafeier Wen Dianqing ECEC Li Qingyue Sdsafeier Chen Dianxiang Edwards Hugh Duong Sky Zhao Kexin Edwards Chen Qing SST Song Weihong Feilihua Lu Changshuo THTF Wu Donghai Feilihua Mu Yongfu Wafer Works Li Wenzhong GAPSS Wei Mingde Wanda Realm Sun Baosheng GCL Liu Yifeng Winifred Li Xiaodong GT Advanced Technologies Jin Junqiang WWOPT Wu Jianchi GT Advanced Technologies Zhou Zhenxing Yhcncmt Liu Lingjian Hans Laser Liao Zhiqing Yhcncmt Xie Yanbo GHTOT Qi Liuyun Table 2 Leadership Changes Group Previous Leader New Leader Sapphire Single Crystal Ingot Task Force (new) Hongbo Zuo AURORA GaN based LED Epitaxial Wafer Task Force (new) Donghai Wu THTF China HB-LED Standards Committee /9/19

2 Table 3 Ballot Results Passed ballots and line items will be submitted to the ISC Audit & Review Subcommittee for procedural review. Failed ballots and line items were returned to the originating task forces for re-work and re-balloting. Document # Document Title Committee Action Table 4 Authorized Ballots # When SC/TF/WG Details Table 5 Authorized Activities # Type SC/TF/WG Details TFOF Sapphire Single Crystal Ingot 1. Define the key parameters of LED sapphire ingot, including dimension, orientation of the end face and flat, surface quality, bulk defects, etc. Task Force 2. Formulate the inspection methods of the key parameters for LED sapphire ingot. 3. Formulate and establish inspection standards of the key parameters for LED sapphire ingot SNARF Sapphire Single New Standard: Specification for Sapphire Single Crystal Ingot Intended for Use Crystal Ingot for Manufacturing HB-LED Wafers Task Force TFOF GaN based LED Epitaxial Wafer Task Force This Task Force is chartered to develop test methods and specifications for GaN based HB-LED epitaxial wafer in order to increase the production efficiency SNARF Epitaxial Wafer New Standard: Test Method for Detecting Surface Defects of GaN based LED Task Force Epitaxial Wafer Used for Manufacturing HB-LED Note: SNARFs and TFOFs are available for review on the SEMI Web site at: Table 6 New Action Items Item # Assigned to Details China Sapphire Single Crystal Ingot Recruiting more task force members to develop the document # 5775 HB-LED Task Force Leaders China GaN based LED Epitaxial Recruiting more task force members to develop the document # 5776 HB-LED Wafer Task Force Leaders Table 7 Previous Meeting Action Items Item # Assigned to Details Status China Single Crystal Recruiting more task force members to develop the Done HB-LED-051 Sapphire Task Force document # Leaders 1 Welcome, Reminders, and Introductions Committee co-chair Yong Ji chaired the meeting and welcomed all attendees, all the attendees introduced themselves. The chairman of AURORA, Hongbo Zuo and the director of Harbin LED Industrial Park, Shi Li gave a remark and welcome all the attendees to get together in Harbin. Kris Shen called the meeting to order at 9:45 AM. The meeting reminders on antitrust issues, intellectual property issues and effective meeting guidelines were reviewed. Agenda was reviewed. China HB-LED Standards Committee /9/19

3 2 Review of Previous Minutes were reviewed. No change was made. Motion: To accept the minutes of the previous meeting as submitted By / 2 nd : Yang Gan (HIT)/ Jianzhe Liu (ECEC) Discussion: Vote: Motion passed Attachment-1, China HB-LED TC pdf 3 Staff Report Kris Shen (SEMI) gave the staff report. Highlights Overview the SEMI Global 2014 Calendar of Events SEMI standards publication update Overview recent published standards from HB-LED TC Remind vote for Cycle 5 & 6 Remind SEMI standards membership application Attachment-2, SEMI Staff Report pdf 4 Liaison Reports 4.1 North America PV Materials Committee Kris Shen (SEMI) reported. Highlights: The co-chairs of North America HB-LED TC are Iain Black (Philips Lumileds), Chris Moore (BayTech-Resor), Mike Feng (Silian), Bill Quinn (WEQ Consulting) There are 7 task forces under the TC Current ballot of cycle6-2014: Document # 5741, Line item revisions to SEMI HB1-0814, Specifications for Sapphire Wafers Intended for Use for Manufacturing High Brightness-Light Emitting Diode Devices Next meeting - November 6th for NA Standards Fall 2014 Meetings, San Jose, California / USA at SEMI Headquarter Attachment-3, NA HB-LED report Sept 2014 MT v2.pdf 4.2 Korea HB-LED Working Group Kris Shen (SEMI HQ) reported. Highlights: 2 teams under the working gruop Next meeting October 23, Veeco Korea, Gyeonggi-do, Korea Attachment-4, KR_HB-LED_liaison_2014Sept.pdf 5 Ballot Review 6 Task Force Reports 6.1 Single Crystal Sapphire Task Force Working on Doc. 5723, Specification for Single Crystal Sapphire Intended for Use for Manufacturing HB- LED Wafers Attachment-5, Single Crystal Sapphire TF Report.pdf 7 Old Business 8 New Business 8.1 SNARF- New Standard: Specification for Single Crystal Sapphire Ingot for LED Application Motion: To approve the SNARF China HB-LED Standards Committee /9/19

4 By/2 nd : Guangbo Ding (AURORA)/ Yang Gan (HIT) Discussion: 1. Members suggested that add standard's scope of influence, such as sapphire ingot and wafer manufacturing, PSS and inspection equipment. 2. Proposed standard including surface quality and bulk defects of the qualified. 3. At last, the title of the SNARF corrected to New Standard: Specification for Sapphire Single Crystal Ingot Intended for Use for Manufacturing HB-LED Wafers. Vote: 14-0, Motion Passed Attachment-6, Specification for Single Crystal Sapphire Ingot for LED Application.pdf 8.2 TFOF- Sapphire Single Crystal Ingot Task Force Motion: To approve the TFOF By/2 nd : Guangbo Ding (AURORA)/ Yang Gan (HIT) Discussion: Vote: 20-0, Motion Passed 8.3 SNARF- New Standard: Test Method for Surface Quality of GaN Based LED Epitaxial Wafer Using for Manufacturing HB-LED Motion: To approve the SNARF By/2 nd : Donghai Wu (THTF)/ Yang Gan (HIT) Discussion:Mingyuan Li(HYPERION) firstly proposed that if the standards should contain a grades and specifications of the measurement results. After discussion, most members suggested that the proposed standards is a test method, not need to include grades and specifications. Yingbin Liu (AMEC) suggested SNARF title word quality is not suitable phrase, the coverage is too wide. After discussion, the SNARF title change to Test Method for Detecting Surface Defects of GaN based LED Epitaxial Wafer Used for Manufacturing HB-LED. All the members also discussed and updated the Rationale and Scope correspondingly. Vote: 25-0, Motion Passed Attachment-7, LED epitaxial wafer using for manufacturing HB-LED.pdf 8.4 TFOF- GaN based LED Epitaxial Wafer Task Force Motion: To approve the TFOF By/2 nd : Donghai Wu (THTF)/ Yang Gan (HIT) Discussion: Most members suggested that the title GaN based LED Epitaxial Wafer is accurate for this task force. All the members also discussed and updated the Charter and Scope. TC members asked TF leaders to recruiting more task force members for developing the document. Vote: 20-1, Motion Passed 9 Action Item Review 9.1 Open Action Items 9.2 New Action Items See Table Next Meeting and Adjournment The next meeting of the China HB-LED Standards committee will be on April 10th, 2015, Friday, in Nanjing, Jiangsu, China. Respectfully submitted by: Kris Shen China HB-LED Standards Committee /9/19

5 SEMI China Minutes approved by: Yong Ji (GHTOT), Co-chair 2014/10/12 Weizhi Cai (SANAN), Co-chair 2014/10/12 Table 8 Index of Available Attachments #1 # Title # Title 1 China HB-LED TC pdf 5 Single Crystal Sapphire TF Report.pdf 2 SEMI Staff Report pdf 6 Specification for Single Crystal Sapphire Ingot for LED Application.pdf 3 NA HB-LED report Sept 2014 MT v2.pdf 7 LED epitaxial wafer using for manufacturing HB-LED.pdf 4 KR_HB-LED_liaison_2014Sept.pdf #1 Due to file size and delivery issues, attachments must be downloaded separately. A.zip file containing all attachments for these minutes is available at For additional information or to obtain individual attachments, please contact [SEMI Staff Name] at the contact information above. China HB-LED Standards Committee /9/19